Toshiba SSM3J36TU,LF MOSFETs Sm-signal/Hi-Speed UFM (SOT-323F)

Technology: Si

Unit Weight: 6.600 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 1.2 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 90 ns

Typical Turn-Off Delay Time: 200 ns

Id - Continuous Drain Current: 330 mA

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 190 mS

Rds On - Drain-Source Resistance: 1.31 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V