Toshiba SSM3J15CT,L3F MOSFETs Small Low Ron Pch Vdss:-30V, Id:-0.1A, Pd: 0.1W

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 3.6 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 100 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 175 ns

Typical Turn-Off Delay Time: 65 ns

Id - Continuous Drain Current: 100 mA

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 12 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V