Toshiba SSM3J112TU,LF MOSFETs Small-signal MOSFET ID=-1.1A VDSS=-30V

Technology: Si

Unit Weight: 6.600 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 800 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 8.5 ns

Id - Continuous Drain Current: 1.1 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 0.5 S

Rds On - Drain-Source Resistance: 310 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V