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Toshiba SSM14N956L,EFF MOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm

ModelSSM14N956L,EFF
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Fall Time: 2.1 us

Rise Time: 1.3 us

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 76 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.33 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 1 us

Typical Turn-Off Delay Time: 3.8 us

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 1.35 mOhms

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