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Toshiba RN2911,LF PNP Epitaxial Silicon Transistor US6-PLN

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Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

Typical Input Resistor: 10 kOhms

Emitter- Base Voltage VEBO: - 5 V

Collector- Base Voltage VCBO: - 50 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: - 100 mA

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: - 50 V

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