Toshiba RN2313(TE85L,F) Bipolar Transistor (BJT)
ManufacturerToshiba(View more products from this manufacturer)
ModelRN2313(TE85L,F)
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Mounting Type: Surface Mount
Power-Maximum: 100mW
Transistor type: PNP-Prebias
Collector current: -100mA
DC electricity gain: 120
Frequency-Transition: 200MHz
Resistance-Base (R1): 47kOhms
Vce Saturation (maximum): 300mV@250uA,5mA
Collector-emitter voltage: -50V
DC current gain (hFE) (minimum): 120@1mA,5V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 100nA(ICBO)
Voltage-Collector-emitter breakdown (maximum): 50V
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