Toshiba RN1312(TE85L,F) Pre-Biased Bipolar Transistor
ManufacturerToshiba(View more products from this manufacturer)
ModelRN1312(TE85L,F)
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Mounting Type: Surface Mount
Power-Maximum: 150mW
Transistor type: NPN-Prebias
Collector current: 100mA
Frequency-Transition: 250MHz
Resistance-Base (R1): 22kOhms
Vce Saturation (maximum): 300mV@250uA,5mA
Collector-emitter voltage: 50V
DC current gain (hFE) (minimum): 120@1mA,5V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 100nA(ICBO)
Voltage-Collector-emitter breakdown (maximum): 50V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts