Toshiba RFM12U7X(TE12L,Q) RF Power MOSFET Radio-Freq PwrMOSFET N-Ch 4A 20W 20V
ManufacturerToshiba(View more products from this manufacturer)
ModelRFM12U7X(TE12L,Q)
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Gain: 10.8 dB
Technology: Si
Output Power: 12 W
Configuration: Single
Mounting Style: SMD/SMT
Operating Frequency: 520 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 20 W
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 4 A
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts