Toshiba HN7G01FU-A(T5L,F,T BJTs - Bipolar Transistors Vceo=-12V Vds=20V Ic=-400mA Id=50mA
ManufacturerToshiba(View more products from this manufacturer)
ModelHN7G01FU-A(T5L,F,T
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Technology: Si
Unit Weight: 1.430 g
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 1000
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 15 V
Continuous Collector Current: - 400 mA
Maximum DC Collector Current: 400 mA
Maximum Operating Temperature: + 125 C
DC Collector/Base Gain hfe Min: 300
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 110 mV
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