Toshiba HN4B04J(TE85L,F) BJTs - Bipolar Transistors Trans LFreq -120V PNP PNP -0.1A
ManufacturerToshiba(View more products from this manufacturer)
ModelHN4B04J(TE85L,F)
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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 240
Gain Bandwidth Product fT: 200 MHz, 300 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 35 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
DC Collector/Base Gain hfe Min: 70
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 100 mV
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