Toshiba HN1C03FU-B(TE85L,F BJTs - Bipolar Transistors Dual Trans NPN x 2 20V, 0.3A, US6
ManufacturerToshiba(View more products from this manufacturer)
ModelHN1C03FU-B(TE85L,F
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 6.800 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 1200
Gain Bandwidth Product fT: 30 MHz
Emitter- Base Voltage VEBO: 25 V
Collector- Base Voltage VCBO: 50 V
Maximum DC Collector Current: 300 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 42 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts