Toshiba HN1A01FU-Y,LF BJTs - Bipolar Transistors US6 PLN TRANSISTOR Pd=200mW F=1MHz

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Technology: Si

Unit Weight: 6.800 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 100 mV