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Toshiba GT8G103(TE16L1,Q) Trans IGBT Chip N-CH 400V 8A 1300mW 3-Pin(2+Tab) Case DP T/R | EMIN.CO.TH

Discrete & Power Modules
Toshiba GT8G103(TE16L1,Q) Trans IGBT Chip N-CH 400V 8A 1300mW 3-Pin(2+Tab) Case DP T/R

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Toshiba GT8G103(TE16L1,Q) Trans IGBT Chip N-CH 400V 8A 1300mW 3-Pin(2+Tab) Case DP T/R

ManufacturerToshiba(View more products from this manufacturer)

ModelGT8G103(TE16L1,Q)

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Collector current: 8A

Collector-emitter voltage: 400V

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