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Technology: Si
Unit Weight: 28 mg
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 100 mW
Gate-Source Cutoff Voltage: - 200 mV
Maximum Drain Gate Voltage: - 50 V
Drain-Source Current at Vgs=0: 1.2 mA
Id - Continuous Drain Current: 500 uA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Vgs - Gate-Source Breakdown Voltage: - 50 V
Vds - Drain-Source Breakdown Voltage: 10 V
