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Toshiba 2SJ360(TE12L,F) Power MOSFET

Model2SJ360(TE12L,F)
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Type: Power MOSFET

Vgs(th): 2 V

Vgs (Max): 20V

Gate Charge (Qg): 6.5nC

Power consumption: 500mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 1A

Input Capacitance (Ciss): 155pF

Operating temperature range: 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 730mOhm

Drive Voltage (Max Rds On, Min Rds On): 4|10V

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