Toshiba 2SD1223(TE16L1,NQ) BJTs - Bipolar Transistors NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min
ManufacturerToshiba(View more products from this manufacturer)
Model2SD1223(TE16L1,NQ)
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Technology: Si
Unit Weight: 360 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 4 A
Maximum DC Collector Current: 4 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 2000
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 1.5 V
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