Toshiba 2SC6076(TE16L1,NV) BJTs - Bipolar Transistors Pwr Transtr Hi-Speed New PW-Mold

Technology: Si

Unit Weight: 360 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 450 at 0.5 A, 2 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 9 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 150 at 1 mA, 2 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 300 mV