Toshiba 2SC5886A(T6L1,NQ) BJTs - Bipolar Transistors NPN VCE 0.22V 95ns 400 to 1000 hFE 5A
ManufacturerToshiba(View more products from this manufacturer)
Model2SC5886A(T6L1,NQ)
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
Emitter- Base Voltage VEBO: 9 V
Collector- Base Voltage VCBO: 120 V
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 220 mV
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