Toshiba 2SC4738-GR,LXHF BJTs - Bipolar Transistors AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:120-700 SOT-416 (SSM)

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 100 mW

DC Current Gain hFE Max: 700 at 2 mA, 6 V

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

DC Collector/Base Gain hfe Min: 120 at 2 mA, 6 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 100 mV