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Toshiba 2SC4207-BL(TE85L,F BJTs - Bipolar Transistors Gen Trans NPN NPN 50V, 0.15A, SMV

Model2SC4207-BL(TE85L,F
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Technology: Si

Unit Weight: 12 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 700

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 100 mV

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