Toshiba 2SC2713BLTE85LF BJTs - Bipolar Transistors NPN 0.1A IC 120V Gen Purp Trans
ManufacturerToshiba(View more products from this manufacturer)
Model2SC2713BLTE85LF
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 700
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 120 V
Collector-Emitter Saturation Voltage: 300 mV
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