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Toshiba 2SA1971(TE12L,F) BJTs - Bipolar Transistors Pb-FREE POWER TRANSISTOR PW-MINI IC=-0.5A V=-400

Model2SA1971(TE12L,F)
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Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

DC Current Gain hFE Max: 450

Gain Bandwidth Product fT: 35 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 140

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 400 mV

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