Toshiba 2SA1163-GR,LF BJTs - Bipolar Transistors 120V 100MA PNP TRANSISTOR
ManufacturerToshiba(View more products from this manufacturer)
Model2SA1163-GR,LF
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Technology: Si
Unit Weight: 12 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 150 mW
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 120 V
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 125 C
Collector- Emitter Voltage VCEO Max: 120 V
Collector-Emitter Saturation Voltage: 300 mV
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