Texas Instruments LMG3522R030RQSR Half-Bridge 650-V 30-m? GaN FET with integrated driv

Features: Robust Protection

Shutdown: Shutdown

Fall Time: 22 ns

Rise Time: 4.3 ns

Technology: Si

Configuration: Non-Inverting

Mounting Style: SMD/SMT

Output Voltage: 5 V

Number of Drivers: 1 Driver

Number of Outputs: 1 Output

Moisture Sensitive: Yes

Supply Voltage - Max: 18 V

Supply Voltage - Min: 7.5 V

Operating Supply Current: 15.5 mA

Maximum Turn-On Delay Time: 54 ns

Maximum Turn-Off Delay Time: 69 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 26 mOhms