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Width: 2.5 mm
Height: 0.48 mm
Length: 3 mm
Fall Time: 3 ns, 2.9 ns
Rise Time: 19.3 ns, 16.3 ns
Technology: Si
Unit Weight: 33.200 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 3.9 nC, 8.9 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 4 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 6.7 ns, 7.9 ns
Typical Turn-Off Delay Time: 10.6 ns, 16.8 ns
Id - Continuous Drain Current: 15 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 40 S, 89 S
Rds On - Drain-Source Resistance: 15.7 mOhms, 7 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V, 1.7 V
