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Width: 3.3 mm
Height: 1 mm
Length: 3.3 mm
Fall Time: 17 ns, 17 ns
Rise Time: 7 ns, 7 ns
Technology: Si
Unit Weight: 76 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Development Kit: VSON
Qg - Gate Charge: 8.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 6 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 4 ns, 4 ns
Typical Turn-Off Delay Time: 11 ns, 11 ns
Id - Continuous Drain Current: 20 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 62 S
Rds On - Drain-Source Resistance: 8.3 mOhms, 8.3 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 750 mV
