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Vgs(th): 1.2 V
Vgs (Max): -12V
Gate Charge (Qg): 0.91nC
Power consumption: 500mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 1.7A
Input Capacitance (Ciss): 155pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 132mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|8V
