Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Type: Power MOSFET
Vgs(th): 0.9V
Vgs (Max): 8V
Gate Charge (Qg): 3.4nC
Power consumption: 2.4W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 5A
Input Capacitance (Ciss): 350pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 49mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
