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Width: 3.3 mm
Height: 1 mm
Length: 3.3 mm
Fall Time: 2.3 ns
Rise Time: 5.7 ns
Technology: Si
Unit Weight: 41 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: BQ500211AEVM-210
Transistor Type: 1 N-Channel Power MOSFET
Qg - Gate Charge: 3.9 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 28 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 4.5 ns
Typical Turn-Off Delay Time: 9.9 ns
Id - Continuous Drain Current: 50 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 10.3 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
