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Taiwan Semiconductor TSM60NB041PW C1G Single MOSFETs

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Channel Type: N Channel

Power Dissipation: 446

Transistor Mounting: Through Hole

Transistor Case Style: TO-247

Drain Source Voltage Vds: 600

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 78

Drain Source On State Resistance: 41

Gate Source Threshold Voltage Max: 4

Datasheet


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