Taiwan Semiconductor TQM84KDCU6 RFG MOSFETs -60V, -0.17A, Dual P-Channel Small-signal

Fall Time: 19.6 ns

Rise Time: 2.4 ns

Technology: Si

Unit Weight: 7 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 1.9 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 320 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.5 ns

Typical Turn-Off Delay Time: 39.2 ns

Id - Continuous Drain Current: 170 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V