Taiwan Semiconductor BC817-16 RF BJTs - Bipolar Transistors 50V, 0.5A, NPN Bipolar Transistor

Technology: Si

Unit Weight: 1.438 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 700 mV