Taiwan Semiconductor BC337-25 A1G BJTs - Bipolar Transistors 50V, 0.8A, NPN Bipolar Transistor

Technology: Si

Unit Weight: 385.077 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 700 mV