STMicroelectronics VNP35N07-E MOSFET N-Ch 70V 35A OmniFET

Fall Time: 200 ns, 4.3 us

Rise Time: 350 ns, 2.7 us

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: Through Hole

Transistor Type: 1 N-Channel OMNIFET Power MOSFET

Qg - Gate Charge: 100 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 40 W

Typical Turn-On Delay Time: 100 ns, 500 us

Typical Turn-Off Delay Time: 650 ns, 10 us

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 25 S

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 70 V

Vgs th - Gate-Source Threshold Voltage: 3 V