STMicroelectronics VND7NV04TR-E Low Side N-Ch 42V 6A OmniFET

Fall Time: 350 ns

Rise Time: 470 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Qg - Gate Charge: 18 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 60 W

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 9 S

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 45 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V