STMicroelectronics VND5N07-E Power MOSFET N-Ch 70V 5A OmniFET

Fall Time: 1100 ns

Rise Time: 400 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 18 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 60 W

Typical Turn-On Delay Time: 150 ns

Typical Turn-Off Delay Time: 3900 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 3 S

Rds On - Drain-Source Resistance: 200 mOhms

Vds - Drain-Source Breakdown Voltage: 70 V

Vgs th - Gate-Source Threshold Voltage: 3 V