STMicroelectronics STW65N023M9-4 MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET

Technology: Si

Unit Weight: 6.080 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 230 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 463 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 95 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 23 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.2 V