STMicroelectronics STW20N95DK5 MOSFETs N-channel 950 V, 275 mOhm typ 18 A MDmesh DK5 Power MOSFET

Fall Time: 25.4 ns

Rise Time: 23 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 50.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 74 ns

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 275 mOhms

Vds - Drain-Source Breakdown Voltage: 950 V

Vgs th - Gate-Source Threshold Voltage: 3 V