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STMicroelectronics STPSC2H065B-TR Schottky Silicon Carbide Diodes 650 V, 2 A High Surge Silicon Carbide Power Schottky Diode

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Technology: SiC

Unit Weight: 350 mg

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 2 A

Vf - Forward Voltage: 1.38 V

Ifsm - Forward Surge Current: 140 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Vrrm - Repetitive Reverse Voltage: 650 V

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