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Width: 4.6 mm
Height: 9.15 mm
Length: 10.4 mm
Fall Time: 115 ns
Rise Time: 250 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q100
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 120 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 42 mOhms
Vds - Drain-Source Breakdown Voltage: 33 V
