STMicroelectronics STGWA60V60DWFAG IGBT Transistors Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT fea

Technology: SiC

Unit Weight: 6.100 g

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Pd - Power Dissipation: 375 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 240 A

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 80 A