STMicroelectronics STD15N60DM6 MOSFETs N-channel 600 V, 286 mOhm typ., 12 A MDmesh DM6 Power MOSFET

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 15.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 110 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 338 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.75 V