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Gain: 23.5 dB
Technology: Si
Unit Weight: 400 mg
Output Power: 400 W
Configuration: Single Common Source
Mounting Style: SMD/SMT
Transistor Type: DMOS FET
Operating Frequency: 30 MHz to 175 MHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 20 V
Id - Continuous Drain Current: 40 A
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 130 V
