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STMicroelectronics SH68N65DM6AG MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET

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Technology: Si

Unit Weight: 8.200 g

Qualification: AQG 324

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 64 A

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

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