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Fall Time: 16 ns
Rise Time: 38 ns
Technology: SiC
Unit Weight: 6.080 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 157 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 565 W
Vgs - Gate-Source Voltage: - 10 V, + 22 V
Typical Turn-On Delay Time: 26 ns
Typical Turn-Off Delay Time: 58 ns
Id - Continuous Drain Current: 119 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 24 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 5 V
