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Fall Time: 14 ns
Rise Time: 16 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 94 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 389 W
Typical Turn-On Delay Time: 16 ns
Typical Turn-Off Delay Time: 32 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 52 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 5 V
