Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Gain: 14.9 dB
Width: 9.4 mm
Height: 3.5 mm
Length: 7.5 mm
Technology: Si
Unit Weight: 3 g
Channel Mode: Enhancement
Output Power: 35 W
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Operating Frequency: 1 GHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 95 W
Vgs - Gate-Source Voltage: + 15 V
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Vds - Drain-Source Breakdown Voltage: 40 V
