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Technology: Si
Unit Weight: 2.300 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 85 W
Emitter- Base Voltage VEBO: 9 V
Maximum DC Collector Current: 8 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 5
Collector- Emitter Voltage VCEO Max: 450 V
Collector-Emitter Saturation Voltage: 2 V
