Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Isolation voltage: ±1000 V (max)
Leakage current: <2 µA at 1000 VDC
Isolation capacitance: 1000 pF
IMRR: 150 dB (DC)
Max. input: ±10 V
Input Impedance: 1 MΩ
Input noise (typ.): 15 nV/√Hz at 1 kHz
Input offset drift: 3 µV/°C (typ)
Output voltage range: ±10 V
Output current: ±20 mA (max)
Output resistance: 50 Ω
Output offset: ±0.1 V, adjustable
Output offset drift: 1 mV/°C (typ.)
Output noise:
80 µVrms (100 Hz bandwidth)
200 µVrms (10 kHz bandwidth)
1.5 mVrms (1 MHz bandwidth)
Gain: x1, x10, x100
Gain error: ±0.5 %
THD: 0.005 % (at 1 kHz, 600 Ω load)
Frequency range:
DC to 100 Hz (Low BW)
DC to 10 kHz (Mediate BW)
DC to 1 MHz (High BW)
Rise time: 300 ns (Vout = 4 V)
Slew rate: 25 V/µs (Vout = 20 Vpp)
Interface: Serial via SIM interface
Connectors:
Banana jacks (2 front-panel),
BNC (1 front-panel),
BNC (1 rear-panel)
DB15 (male) SIM interface
Power: Power supplied by the SIM900 Mainframe, or optionally by a user-supplied DC power supply (±15 V, +5 V, and +24 V).
Dimensions: 1.5" × 3.6" × 7.0" (WHL)
Weight: 1.5 lbs.
