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Technology: Si
Unit Weight: 8 mg
Carrier Life: 400 ns
Configuration: Low Inductance
Termination Style: SMD/SMT
Vf - Forward Voltage: 850 mV
Vr - Reverse Voltage: 100 V
Pd - Power Dissipation: 250 mW
Maximum Diode Capacitance: 0.25 pF
Maximum Operating Frequency: 10 GHz
Minimum Operating Frequency: 10 MHz
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Maximum Series Resistance @ Maximum IF: 2 Ohms
Maximum Series Resistance @ Minimum IF: 3 Ohms
